| PART |
Description |
Maker |
| S8866-6411 |
Photodiode array combined with signal processing IC
|
Hamamatsu Corporation
|
| S8865-128G S8865-64G S8866-128G-02 S8865-256G S886 |
Photodiode array combined with signal processing IC for X-ray detection
|
Hamamatsu Corporation
|
| G7151-16 G7150 G7150-16 |
InGaAs PIN photodiode array
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
|
HAMAMATSU[Hamamatsu Corporation]
|
| S4111-35Q S4111-16Q S4111-16R S4111-46Q S4114-35Q |
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
|
Hamamatsu Corporation
|
| NFA31GD1004704D NFA31GD4704704D NFA31GD1001014D NF |
EMIFIL (RC Combined) Array
|
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co...
|
| G7150-16 G67150 G7151 |
InGaAs PIN photodiode array
|
Hamamatsu Corporation
|
| G7150-16 |
InGaAs PIN photodiode array
|
Hamamatsu Photonics
|
| C900406 C9004 |
Driver circuit for 16-element photodiode array
|
Hamamatsu Corporation
|
| S8558 |
Surface mountable 16-element photodiode array
|
Hamamatsu Corporation
|
| PDB-C232 |
Blue Enhanced Linear Array Silicon Photodiode
|
Advanced Photonix, Inc.
|
| MXP18-C |
Multi Element Opto Arrays
Monolithic Photodiode Array-Chip
CERM RESONATOR 6.00MHZ .5% SMD
|
MICROSEMI[Microsemi Corporation]
|
